Ge/Au和Ge/Ag双层膜中非晶Ge加热晶化的动态观测  

In Situ Observation for Heated Crystallization of Amorphous Ge in Ge/Au and Ge/Ag Bilayer Films

作　　者：张人佶[1] 李莉[2] 吴自勤[3] 

机构地区：[1]清华大学 [2]兰州大学 [3]中国科学技术大学

出　　处：《电子显微学报》1992年第4期305-311,共7页Journal of Chinese Electron Microscopy Society

摘　　要：本文在JEM—1000高压电镜中对Ge/Au和Ge/Ag双层膜进行了加热动态观测,并与真空退火的结果进行了比较。结果表明,双层膜中非晶Ge的晶化不仅取决于加热温度,而且取决于加热时间。加热条件的不同引起不同的晶化机制。本文讨论了非晶Ge晶化时等轴状缩聚区的形成与长大,并提出了这类区域内的能量平衡条件。In situ heating observation for the Ge/Au and Ge/Ag bilayer films has been made with JEM-1000 ultra- high voltage electron microscope (UHVEM) and the result has been compared with that of the vacuum an-nealing for the same kind of bilayer films, it has been shown that the crystallization of amorphous Ge (a-Ce) depends not only on the heating temperature but also on the heating time and heating rate. The different heating conditions result in different crystallization mechanisms. It has been discussed that the equalaxial-like aggrega-tion (EA) region forms and grows during crystaliization of a-Ge, and the energieal model of the local favourable crystallization in the EA region has also been proposed for explaining this phenomena. The elastic strain energy Ec and the crystallization activation energy E. for this region have been estimated.

关 键 词：双层膜 晶化 非晶Ge 高压电镜 观测 

分 类 号：TN304.11[电子电信—物理电子学]