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作 者:朱征[1] 吴霞宛[1] 王洪儒[1] 李玲霞[1] 袁廷志[1]
机构地区:[1]天津大学电信学院,天津300072
出 处:《硅酸盐通报》2002年第6期89-92,共4页Bulletin of the Chinese Ceramic Society
摘 要:以BaO -Nd2 O3-TiO2 为主要研究体系 ,以Bi2 O3,PbO为添加剂 ,研究了系统的成分配比和工艺对瓷料的介电性能的影响 ,成功研制出了性能优良的高频、高Q的MLC陶瓷材料。研究结果表明 ,当BaO :Nd2 O3:TiO2 的摩尔比为 1 :1 :5时 ,可在中温范围内 (≈ 1 1 60℃ )制成介电常数ε≈ 98,介电损耗tgδ≈ 1 .3× 1 0 -4 (Q≈ 80 0 0 ) ,电容量的温度系数αc≈ 3 0ppm/℃ ,绝缘电阻IR >1 0 13Ω的高频、高Q的MLC陶瓷材料 ;当BaO :Nd2 O3:TiO2 的摩尔比为 1 :1 :4 .5时 ,可在较高温度范围内 (≈ 1 2 0 0℃ )制成介电常数ε≈ 93 ,介电损耗tgδ≈ 0 .8×1 0 -4 (Q≈ 1 0 0 0 0 ) ,电容量的温度系数αc≈ 1 0ppm/℃ ,绝缘电阻IR >1 0 13Ω的高频。In this paper, the properties of the system of BaO-Nd 2O 3-TiO 2 doped with Bi 2O 3 and PbO were studied in detail. The influence of the process,the content of TiO 2 and the dopants on the properties of the system was also studied. The ceramic material with high frequency,high Q value was made.When the ratio of BaO:Nd 2O 3:TiO 2 is 1:1:5 by mol,the ceramic material with dielectric constant ε≈98,dielectric loss tg δ≈1.3×10 -4(Q≈8000),temperature coefficient of capacitance α c≈30ppm/℃,insulation resistance IR>10 13Ω can be obtained at 1160℃. When the ratio of BaO:Nd 2O 3 :TiO 2 is 1:1:4.5 by mol,the ceramic material with dielectric constant ε≈93,dielectric loss tgδ≈0.8×10 -4(Q≈10000), temperature coefficient of capacitance α c≈10ppm/ ℃,insulation resistance IR>10 13 can be obtained.
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