制备及钝化条件对多孔硅发光性能的影响  

Influences of Preparation and Passivated Conditions on the Luminescence Properties of Porous Silicon

作　　者：李宏建[1] 赵楚军[1] 谢自芳[1] 朱家俊[1] 彭景翠[1] 易丹青[2] 

机构地区：[1]湖南大学光电子材料研究所,湖南长沙410082 [2]中南大学材料科学与工程学院,湖南长沙410083

出　　处：《光电子．激光》2003年第1期54-57,共4页Journal of Optoelectronics·Laser

基　　金：湖南省自然科学基金资助项目 (98JJY2 0 4) ;湖南省教委青年基金资助项目 (2 0 0 0 B0 0 6)

摘　　要：研究了氧化电流密度对多孔硅 (PS) PL 谱的影响。结果表明 ,随着氧化电流密度增大 ,PS的微晶 Si平均尺寸减小 ,且尺寸大的微晶 Si数量也减少 ,说明制备条件对钝化 PS的发光有影响 ;PS经适当的高温氧化处理后 ,其 PL 谱会发生明显变化 ;选用含有胺基的正丁胺 ,采用射频辉光放电法对 PS进行钝化处理 ,在一定程度上提高了 PS的发射强度伴随发光峰位的较大蓝移 ;其钝化 PS的荧光谱随钝化温度和钝化时间变化 ,说明钝化条件对钝化 PS的发光有直接影响。由此 ,可以通过调节制备和钝化条件来获得最大的发光效率和所需要的发光颜色。The luminescence quenching and strengthen effects of porous silicon(PS) caused by adsorbing organic molecular were investigated.The results indicate that luminescence in PS may actually be luminescence from molecules attached to the Si surface.By using n butylamine as carbon resource,carbon film is deposited on the PS surface by means of radio frequency glow discharge plasma system.Changing passivated temperature and passivated time,PL of the passivated samples shows an obvious change,and the highest light emitting efficiency and the wavelength required could be acquired by adjusting passivated temperature and passivated time.These results show that carbon films might be an excellent passivation films on porous silicon and show a brilliant application prospect.

关 键 词：多孔硅 氧化电流密度 热氧化温度 钝化温度 钝化时间 发光效率 

分 类 号：TN304.12[电子电信—物理电子学]