NaF对BMT系陶瓷结构及介电性能的影响  

The Effect of NaF on the Structure and Dielectric Property of BMT Ceramic

作　　者：高伟[1] 谢道华[1] 邢晓东[1] 田宏敏[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《电子元件与材料》2003年第1期30-32,共3页Electronic Components And Materials

摘　　要：Ba(Mg1/3Ta2/3)O3(BMT) 具有复合钙钛矿型结构。其微波性能优异(Q > 12 000),但由于烧结温度很高(1 5301 650℃),导致成本增加,难以实用化。本实验中采用传统的固相法制备纯的BMT,然后以NaF作为添加剂,研究了NaF对BMT结构和介电性能的影响,结果表明以NaF为添加剂可大幅度降低烧结温度。样品在1 350 ℃烧结时,具有良好的介电性能。Ba (Mg1/3 Ta2/3) O3(BMT) is of complex perovskite structure. Because of its excellent performances at microwave band, it has been used in satellite communication at 10 GHz or over. However its application has been limited by its high sintering temperature (around 1 600 ℃). To solve the problem, BMT was doped with NaF and the temperature reduced to 1 350℃. The acquired sample of BMT exhibits a good dielectric property.

关 键 词：NAF BMT系 陶瓷结构 介电性能 氟化钠 电工材料 微波陶瓷 钙钛矿 烧结温度 

分 类 号：TM223[一般工业技术—材料科学与工程] TQ174.756[电气工程—电工理论与新技术]