增益开关半导体激光器最佳工作状态研究  

Study on Optimal Operating Condition of Gain-switched Semiconductor Laser Diode

作　　者：伍剑[1] 张帆[1] 左鹏[1] 郭宏翔[1] 林金桐[1] 

机构地区：[1]北京邮电大学光通信中心,北京100876

出　　处：《中国激光》2003年第1期12-16,共5页Chinese Journal of Lasers

摘　　要：研究了不同调制速率下的增益开关半导体激光器的最佳工作状态。理论分析表明 ,在不同的调制速率下 ,激光器的最佳工作状态有较大的差异。在低速调制下 ,激光器应该工作在较小的直流偏置下 ,以避免输出脉冲拖尾的产生。在高速调制下 ,激光器应该工作在较高的直流偏置下 ,以提高输出脉冲的消光比。理论结果同实验结果相吻合。The optimal operating condition of gain switched semiconductor laser with different modulation rate is studied in this paper. The theoretical results point that the optimal operating condition is quite different for the variation of modulation rate. In the condition of low modulation rate, small bias current should be applied to avoid the tailing of output pulse. In the condition of high modulation rate, large bias current should be applied in order to improve the extinction ratio of the pulse. The theoretical results agree well with the experimental results.

关 键 词：最佳工作状态 增益开关半导体激光器 消光比 光时分复用 调制速率 

分 类 号：TN248.4[电子电信—物理电子学]