半导体断路开关实验研究  

Experimental study on the characteristics of semiconductor opening switch

作　　者：苏建仓[1] 丁永忠[2] 宋志敏[2] 丁臻捷[2] 刘国治[2] 刘纯亮[1] 

机构地区：[1]西安交通大学电子与信息工程学院,陕西西安710049 [2]西北核技术研究所,陕西西安710024

出　　处：《强激光与粒子束》2002年第6期949-953,共5页High Power Laser and Particle Beams

基　　金：国家863激光技术领域资助课题

摘　　要：　介绍了半导体断路开关(SOS)特性参数测试平台和测试方法,并对半导体断路开关的截断阻抗、截断时间、电压增益、输出脉冲半高宽以及能量传递效率等参数进行了实验研究。结果表明,正、反向泵浦时间是影响半导体断路开关特性的最主要因素。实验获得了截断时间、电压增益和能量传递效率与正、反向泵浦时间的依赖关系以及SOS截断过程中的阻抗变化特性。An experimental setup is developed to measure the characteristics of semiconductor opening switch (SOS). The parameters, such as interruption impedance, current interruption time, voltage gain, pulse duration and energy transfer efficiency, are studied experimentally. The experimental results show that forward pumping time and reverse pumping time are important parameters for semiconductor opening switches. The influences of forward pumping time and reverse pumping time on interruption time, voltage gain, and energy transfer efficiency are obtained. In the interruption process, the impedance variation is divided into three phases: that is rapid increasing phase, slow change phase and completely interruption phase.

关 键 词：半导体断路开关 脉冲功率 能量传递效率 脉冲功率技术 

分 类 号：TN78[电子电信—电路与系统]