CaF_2掺杂对ZnNb_2O_6陶瓷烧结行为及介电性能的影响  

Effects of CaF_2 Addition on Sintering Behavior and Microwave Dielectric Properties of ZnNb_2O_6 Ceramics

作　　者：张迎春[1] 李龙土[1] 桂治轮[1] 

机构地区：[1]清华大学新型陶瓷与精细工艺国家重点实验室,北京100084

出　　处：《压电与声光》2003年第1期49-51,63,共4页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(59995523)

摘　　要：用传统固相法合成了CaF2掺杂ZnNb2O6微波介质陶瓷,通过XRD、SEM以及HP4291阻抗分析仪等测试手段对其烧结行为、晶体结构及微波介电性能进行了系统研究。结果表明,CaF2掺杂能有效地降低ZnNb2O6陶瓷的烧结温度,提高介电常数,但品质因数Q值有所下降。1100°C烧结w(CaF2)=0.5%(质量比)掺杂的ZnNb2O6陶瓷具有较好的介电性能:εr=31.6,Q×f=68THz,τf=-47×10-6°C-1。The microwave dielectric ceramics ZnNb2O6 doped with CaF2 have been prepared by conventional solid state ceramics route.The sintering behavior,crystal structure and microwave dielectric properties of CaF2doped ZnNb2O6 ceramics were investigated systematically by XRD,SEM and HP4291 impedance analyzer.It was found that CaF2 addition can lower the sintering temperature,and improve the εr value of ZnNb2O6 ceramics,However the Q×f values of CaF2doped ZnNb2O6 ceramics were lower than that of undoped ZnNb2O6 ceramics.The 05%CaF2doped ZnNb2O6 ceramics sintered at 1 100 °C have the optimum microwave dielectric properties:εr=31.6,Q×f=68 THz and τf=-47×10-6 °C-1?

关 键 词：烧结 介电性能 ZnNb2O6 微波介质陶瓷 CaF2掺杂 

分 类 号：TM28[一般工业技术—材料科学与工程]