功率器件IGBT串联的移相控制技术  

A Phase-Shifting Controlling Technique for Series Connection of IGBTs

作　　者：付志红[1] 苏向丰[1] 周雒维[1] 

机构地区：[1]重庆大学教育部高电压与电工新技术重点实验室,重庆400044

出　　处：《重庆大学学报（自然科学版）》2003年第2期113-116,共4页Journal of Chongqing University

摘　　要：IGBT器件在电力装置中得到广泛应用 ,用IGBT串联提高装置对超单管耐压电源的控制是切实可行的 ,关键问题要解决IGBT串联的静态均压和动态过压问题。提出用并联电阻的办法解决静态均压问题 ;用移相控制技术 ,通过对主电源分级 ,对各级电源移相控制 ,实现主电源的分级接入和撤离 ,解决主控电路中IGBT的动态过压问题。文中讨论了IGBT串联电路的耐压、移相角度等参数的确定办法 ,分析了该技术对开关极限频率、输出波形的影响以及存在的问题。WT絀nsulated gate bipolar transistors are increasingly used in high voltage power devices where a request for fast power switches is growing. Series connection of devices is a viable approach to manage voltages higher than the blocking voltage of the single device. An analysis is presented of IGBTs connected in series, with reference to the phenomena of static voltage equilibrium and dynamic over voltage. In this paper a novel approach of phase shifting controlling for Series connection of IGBTs is presented. By dividing the main power supply, controlling the startup and end off sequence of child power supplys, over rating voltage can be controlled. Author expounds the method of calculating the voltage resistant capacitor of combining switching and the minimum angle of phase shifting, and discusses the side effect on the utmost frequency of switching and the output wave. This technique has been adopted in the research of high-power transmitter. [WTHZ]

关 键 词：功率器件 IGBT 串联 动态过压 移相控制 耐压能力 绝缘栅双极晶体管 静态过压 耐压控制 

分 类 号：TN32[电子电信—物理电子学] TM862[电气工程—高电压与绝缘技术]