碳化硅粉体的氧化动力学行为  

OXIDATION KINETICS BEHAVIOR OF SiC POWDER

作　　者：朱练平 夏光华[2] 

机构地区：[1]景德镇陶瓷职工大学,333000 [2]景德镇陶瓷学院,333001

出　　处：《中国陶瓷工业》2002年第6期30-32,共3页China Ceramic Industry

摘　　要：对颗粒碳化硅在温度范围 145 7- 1675K下的氧化性能进行了研究。发现采用沉降曲线法获得的粒度数据遵循对数统计分布 ;The Oxidation behavior of SiC is a property of essential importance for the use of this material in the high-temperature range.The oxidation behaviour of particulate SiC′ has been studied in the temperature of 1475-1675K in this paper.The particle size date obtained by the sedigraph method has been found to follow the logarithmic statistical distrbution.The relative mass ratio date obtained from the isothermal mass-gain measurements were fitted using a computer simulation to get the best of the rate constant.

关 键 词：沉降曲线法 计算机模拟 碳化硅粉体 氧化动力学 陶瓷窑具 

分 类 号：TQ174.65[化学工程—陶瓷工业]