CuTsPc超分子膜修饰FET器件的光敏特性研究  

Photosensitive Characteristic of FET Devices Modified by CuTsPc Supermolecular Films

作　　者：江雷[1] 朱明[1] 刘旺[1] 田珂[1] 白玉白[1] 李铁津 

机构地区：[1]吉林大学化学系,长春130023

出　　处：《高等学校化学学报》1992年第1期93-96,共4页Chemical Journal of Chinese Universities

摘　　要：在场效应晶体管上修饰八层磺化酞菁铜超分子膜可制成新型光敏器件,该器件具有稳定的阈值电压,良好的输出特性及与磺化酞菁铜的吸收基本一致的光谱响应,并利用表面光电压谱对其光敏机理进行了探讨。In this paper, a new type of photosensitive.device is reported, it was made by modifying 8 layers of copper tetrasulfonatophalocyaine(CuTs'Pc) supermolecular films onto FET device. The measuring results of characteristic device show that the device has a stable threshold voltage (VT), better output characteristic and a spectral response which is in agreement with that of the absorption spectra. Finally, the mechanism of the device was studied by using surface photovolt-age spectrascopy.

关 键 词：磺化酞菁铜 超分子膜 光敏 光电压 

分 类 号：O657.15[理学—分析化学]