Surface Morphology and Photoluminescence of 1.3 μm Wavelength In(Ga)As/GaAs Quantum Dots  

作　　者：WEIQuan－xiang NIUZhi－chuan 

机构地区：[1]Dept.ofPhys,ShanxiUniversity,Taiyuan030006,CHN [2]Nat.Lab.forSuperlatticesandMicrostructures,InstituteofSemiconductors,ChineseAcademyofSciences,Beijing100083,CHN

出　　处：《Semiconductor Photonics and Technology》2003年第1期30-33,共4页半导体光子学与技术（英文版）

基　　金：NationalNaturalScienceFoundationofChina(60 1 760 0 6);ProjectsofNano -scienceTechnologyofChineseAcademyofSciences

摘　　要：Self-organized In 0.5 Ga 0.5 As/GaAs quantum island structure emitting at 1.35 μm at room temperature has been successfully fabricated by molecular beam epitaxy (MBE) via cycled (InAs) 1/(GaAs) 1 monolayer deposition method. Photoluminescence (PL) measurement shows that very narrow PL linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In 0.5 Ga 0.5 As islands structure. Our results provide important information for optimizing the epitaxial structures of 1.3 μm wavelength quantum dot (QD) devices.Self―organized In_(0.5)Ga_(0.5)As/GaAs quantum island structure emitting at1. 35 μm at room temperature has been successfully fabricated by molecular beam epitaxy (MBE) viacycled (InAs )_1/( GaAs )_1 monolayer deposition method. Photoluminescence (PL) measurement showsthat very narrow PL linewidth of 19. 2 meV at 300 K has been reached for the first time, indicatingeffective suppression of inhomogeneous broadening of optical emission from the In_(0.5)Ga_(0.5)Asislands structure. Our results provide important information for optimizing the epitaxial structuresof 1. 3 μm wavelength quantum dot (QD) devices.

关 键 词：quantum dot molecular beam epitaxy PHOTOLUMINESCENCE 

分 类 号：TN304.054[电子电信—物理电子学]