电化学沉积纳米多层膜研究  

Manufacture and Characterization for Nano-structure Multi-layer by Electro-deposition

作　　者：陶景光[1] 廖兆曙[1] 冯继军[1] 彭喜英[1] 

机构地区：[1]华中科技大学,湖北武汉430074

出　　处：《武汉科技学院学报》2003年第1期32-35,共4页Journal of Wuhan Institute of Science and Technology

基　　金：湖北省自然科学基金资助项目(鄂基 99 J 23).

摘　　要：用电化学沉积法和自制的微机数控电化学电源,在半导体硅片等衬底上成功制备出Cu/Co等组分调制多层膜,利用EPMA、SEM、STM(AFM)、TEM多种方法表征其微结构。 电化学沉积实验表明,在较高过电压、较低电流密度和较低PH(≈1.8)等条件下,能获得GMR≥8%的纳米多层膜。The Cu/Co Nano-Multilayer Films by composition modulation on semi-conductor silicon were manufactured with electrochemical deposition and equipment by means of computer. His Microstructure characteristics were studied using EPMA,SEM,STM(AFM),TEM and the electro-deposition current-time curves. Films grown at high over-voltage, low current an low PH(≈1.8) exhibited giant magneto-resistance(GMR) of over 8%.

关 键 词：电化学沉积 纳米多层膜 巨磁阻效应 结构表征 表面微结构 制备工艺 

分 类 号：TB383[一般工业技术—材料科学与工程] TQ153.2[化学工程—电化学工业]