扩散连接中界面迁移机制研究  

Study on the mechanism of the boundary migration in diffusion bonding

作　　者：徐子文[1,2] 阮中健[1] 张桂林[1] 黄正[1] 

机构地区：[1]北京航空航天大学材料科学与工程学院 [2]华中科技大学激光技术国家重点实验室,湖北武汉430063

出　　处：《焊接技术》2003年第1期8-9,1,共2页Welding Technology

基　　金：激光技术国家重点实验室开放基金资助项目([2001]0106);航空基础科学基金资助项目(01H51004)

摘　　要：发现并研究了扩散连接过程中3种主要界面迁移形式:Ⅰ.化学诱发晶界迁移;Ⅱ.再结晶过程控制界面迁移;Ⅲ.超塑变形过程控制界面迁移。建立了一个球状晶体生长物理模型来讨论扩散连接界面迁移中杂质的行为,并讨论了滞留界面的杂质对连接的断裂形貌和力学性能的影响。Three fundamental categories of boundary migrations in diffusion bonding were observed and discussed: I .Chemically Induced Grain Boundary Migration, II .Boundary Migration Controlled by Recrystallization, III .Boundary Migration Stimulated by Superplastic Deformation. A physical model of spheric-grain growth was set to describe the behavior of impurities during boundary migration in diffusion bonding. The influence of impurities stagnating in grain boundary on the fracture morphology and mechanical properties of bonds was discussed.

关 键 词：扩散连接 界面迁移机制 CIGM 杂质 超塑变形 

分 类 号：TG453.9[金属学及工艺—焊接]