掺Bi热蒸发CdS光导薄膜  

Bismuth-doped Thermal Evaporated CdS Photoconductive Films

作　　者：顾培夫[1] 陈惠广[1] 何旭涛 梅霆[1] 朱振才[1] 唐晋发[1] 

机构地区：[1]浙江大学光电科仪系

出　　处：《光电子．激光》1992年第1期22-26,共5页Journal of Optoelectronics·Laser

摘　　要：本文用三种方法制备了掺Bi的CdS光导薄膜。一种方法是将Bi粉和CdS粉均匀混合蒸发;第二种方法是将CdS薄膜在CdS掺杂的Bi气氛中扩散,扩散温度为400～450℃;第三种方法是在CdS膜外再镀上一层很薄的Bi膜。文中介绍了它们的制备条件和光导特性,同时讨论了制备条件与光电导特性的关系。Bismuth-doped CdS photoconductive films have been prepared using three different methods. The first is that the CdS powder mixed with Bi powder is coevaporated in an evaporated source. The second is the thermal diffusion, in which CdS films are placed in atmosphere of CdS and Bi at temperature of 400～450℃. The last is that an overcoating of Bi is deposited on CdS film. The preparation conditions, photoconduclive performance and the relation between preparation condition and performance have been presented.

关 键 词：掺硼 CdS光导薄膜 热蒸发 薄膜 

分 类 号：TN304.055[电子电信—物理电子学]