反应熔渗法制备C/C-SiC复合材料及其影响因素的研究进展  

Factors Affecting Properties of C/C-SiC Composites Prepared by Reactive Melt Infiltration

作　　者：王林山[1] 熊翔[1] 肖鹏[1] 任芸芸[1] 

机构地区：[1]中南大学粉末冶金国家重点实验室,长沙410083

出　　处：《粉末冶金技术》2003年第1期37-41,共5页Powder Metallurgy Technology

基　　金：教育部科学技术研究重点项目 ( 0 2 148)

摘　　要：本文比较了C/C -SiC复合材料的三种主要制备方法 ,主要介绍了反应熔渗法制备工艺 ,以及液Si渗入C/C多孔体、液Si与固体C反应和C/C -SiC复合材料性能的主要影响因素 。Three main preparation methods of C/C-SiC composites including chemical vapor infiltration (CVI), liquid polymer infiltration (LPI) and reactive melt infiltration (RMI) were reviewed and compared with each other. The RMI technology was emphasized. Factors affecting liquid silicon infiltration into the C/C porous preforms, the reaction between liquid silicon and solid carbon, and the properties of C/C-SiC composites were discussed separately. Critical issues to be solved were put forward.

关 键 词：反应熔渗 C/C-SIC复合材料 影响因素 研究进展 C/C多孔体 

分 类 号：TB332[一般工业技术—材料科学与工程]