CdSe/PVK纳米晶薄膜及其电致发光特性  

Electroluminescence of Nanosized CdSe/PVK Composite Films

作　　者：刘舒曼[1] 徐征[1] Wageh S. 徐叙瑢[1] 

机构地区：[1]北方交通大学光电子技术所信息存储显示与材料开放实验室,北京100044

出　　处：《光电子．激光》2003年第2期118-121,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金(19974002);校人才基金(RC2002035)资助项目

摘　　要：以巯基乙酸(RSH)为稳定剂,在水溶液中合成CdSe纳米晶,用表面活性剂将分散在水溶液中的纳米颗粒转移到有机溶剂中,与具有电荷输运性能的有机聚合材料复合,作为电致发光(EL)器件的工作层,得到较强的位于600nm附近的CdSe纳米晶的带边发射,以及较弱的位于420nm附近的来自聚合物的发射。器件EL强度首先随着外加电压的增加而增加,当电压超过26V时,EL强度开始下降。器件的电流-电压(I-V)特性基本符合二极管特性,表明器件是受载流子注入限制的。CdSe nanocrystals were prepared in aqueous solution with mercapto-acetate acid as stabilizer. A surfactant was placed on the surfaces of CdSe nanoparticles by elecrostatic attractive forces so that CdSe nanoparticles can be transferred from the aqueous solution to somr organic solution. Such well-dispersed nanoparticles in organic solution were mixed sufficiently with a polymer material with the properties of carrier transportation. Then an electroluminescence (EL) device was fabricated by using a thin film which was spin-coated from the above nanoparticle/polymer mixture solution as the work layer. The EL measurement gave two emission peaks at 600 nm, which came from the nanoparticles, and 420 nm which came from the polymer, respectively. The EL emission intensity increased to its maximum at an applied voltage of 26 V, and then decreased with the applied voltage. The I-V curve of this device indicated that the EL was determined by the carrier injection at the interface of the working layer and the electrodes.

关 键 词：CdSe/PVK纳米晶薄膜 电致发光 制备方法 

分 类 号：TN383.1[电子电信—物理电子学]