利用半导体二极管伏安特性进行朗缪尔探针性能测试研究  

Study on Technology of Using Semiconductor Diode Volt-Ampere Characteristic to Test Langmuir Probe Performance

作　　者：刘超[1] 关燚炳[1] 张爱兵[1] 孙越强[1] 梁金宝[1] 郑香脂[1] 丁建京[1] 孔令高[1] 田峥[1] 王文静[1] 

机构地区：[1]中国科学院国家空间科学中心,北京100190

出　　处：《空间科学学报》2015年第6期763-768,共6页Chinese Journal of Space Science

基　　金：电磁监测试验卫星项目资助(Y26604AG80)

摘　　要：研究讨论了一种利用半导体二极管伏安特性进行朗缪尔探针性能测试的方法.设计的朗缪尔探针性能测试方法对外界因素要求较低,在常温常压的通常实验室环境下即可进行,其测试结果可作为利用地面等离子体环境进行定标测试前的初步性能验证.通过实验室环境下的测试试验,验证了该方法的有效性和可行性.A technique of using a semiconductor diode volt-ampere characteristic to test Langmuir probe performance is presented.The Langmuir probe is an important technique for in-suit detecting the space plasma,and its performance test is the key to ensure that its technical indicators can meet the mission requirements.The technique of using a semiconductor diode volt-ampere characteristic demands less of external factors,so it can be carried out in a laboratory environment.The test results can be used as preliminary performance verification before calibration test of ground plasma environment,and it is proved that the method is effective and feasible in a lab environment test.

关 键 词：朗缪尔探针 性能测试 伏安特性 半导体二极管 

分 类 号：P354[天文地球—空间物理学]