1V,19GHz CMOS分频器设计  

Design of a 1V,19GHz CMOS Frequency Divider

作　　者：曾晓军[1] 李天望[1] 洪志良[1] 

机构地区：[1]复旦大学电子工程系,上海200433

出　　处：《Journal of Semiconductors》2003年第4期416-420,共5页半导体学报（英文版）

摘　　要：对传统分频器电路工作在低电压 (1V)时存在的问题进行了分析 ,在此基础上提出了一种新的分频器电路结构 ,将 NMOS和 PMOS管的直流偏置电压分开 ,有效地解决了分频器在低电压下工作所存在的问题 .采用 0 .18μmCMOS工艺参数进行仿真的结果表明 ,该分频器在 1V的电源电压下 ,能够工作的最高输入频率为 19GHz,功耗仅为 2 .5 m W.In the frequency synthesizer,the frequency divider is one of the building block which works at the highest frequency.Based on the problem analysis of the conventional frequency dividers working at a low voltage (1V),a novel frequency divider circuit is proposed and different DC biasing voltage is used in the NMOS and PMOS transistor of the new divider.The simulation results in 0 18μm CMOS process show that the maximum input frequency of the new frequency divider is 19GHz,and the power consumption is only 2 5mW at the power supply of 1V.

关 键 词：CMOS 分频器 频率合成器 锁相环 场效应器件 

分 类 号：TN772[电子电信—电路与系统]