多有源区垂直腔面发射半导体激光器的特性分析  

Analysis on the Characteristics of Multiple-active-region Vertical-cavity Surface-emitting Laser

作　　者：朱文军[1] 郭霞[1] 廉鹏[1] 邹德恕[1] 高国[1] 沈光地[1] 

机构地区：[1]北京工业大学光电子技术实验室,北京100022

出　　处：《北京工业大学学报》2003年第1期35-38,共4页Journal of Beijing University of Technology

基　　金：国家自然科学基金资助项目(69889601);北京市基金重点资助项目(4021001)

摘　　要：提出了一种多有源区隧道再生应变量子阱垂直腔面半导体激光器(VCSEL)结构,其微分量子效率可以大于1,并且可以得到阈值电流小、输出功率大的器件。从理论上得到了针对这种结构的以固定输入电流及串联电阻为参数的最优化分布式布喇格反射镜(DBR)的反射率。从理论上证实了这种结构随着有源区数目的增加能大大提高输出功率,并能极大降低阈值电源密度。The multiple-active-region tunneling-regenerated strained-quantum-well vertical-cavity-surface emitting laser (VCSEL) with a more-than-one differential quantum efficiency is proposed. This multiple-active-region VCSEL is expected to have the improved performance of smaller threshold current and higher output power. Theorectically, the optimum DBR reflectivity with fixed supply current and series resistance as parameters is determined for this novel structure. Finally, the following conclusion is proved in theory: with the increase of active region numbers, this multiple-active-region structure can greatly enhance the output power and lower the threshold current density.

关 键 词：多有源区 隧道再生 垂直腔面发射激光器 分布式布喇格分射镜 反射率 量子阱 半导体激光器 特性分析 

分 类 号：TN248.4[电子电信—物理电子学]