Mg∶In∶LiNbO_3晶体波导基片光损伤性能研究  

INVESTIGATION ON PHOTO-DAMAGE PROPERTIES OF Mg∶In∶LiNbO_3 WAVEGUIDE SUBSTRATE

作　　者：徐悟生[1] 许士文[1] 王锐[1] 徐玉恒[1] 

机构地区：[1]哈尔滨工业大学电子科学与技术系

出　　处：《硅酸盐学报》2003年第1期5-8,共4页Journal of The Chinese Ceramic Society

基　　金：国家重大基础研究项目 973资助 (G19990 330 );国家"863"高技术计划项目资助 ( 2 0 0 1AA3130 40 ) ;黑龙江省自然科学基金 (A0 1-0 3)资助项目

摘　　要：在LiNbO3中掺入 3%MgO和 1%In2 O3(摩尔分数 ,下同 ) ,采用Czochralski法生长了 3%Mg∶2 %In∶LiNbO3晶体。极化后 ,对晶体进行氧化和还原处理。利用光斑畸变法 ,测试了晶体在 488.0nm波长下的抗光损伤能力 ,结果表明 :Mg∶In∶LiNbO3晶体抗光损伤能力比LiNbO3晶体提高 2个数量级以上。通过Li空位模型 ,研究了Mg∶In∶LiNbO3晶体抗光损伤能力增强的机理。利用苯甲酸质子交换法制备了几种晶体的光波导基片 ,并采用m -线法测试了 y切型波导基片在 632 .8nm波长下的光损伤阈值 ,Mg∶In∶LiNbO3光波导基片的抗光损伤能力也相应提高了Doping 3% MgO and 1% In_2O_3 (in mole, same below) in LiNbO_3, 3%Mg∶2%In∶LiNbO_3 crystals were grown by the Czochralski method. After poled, the samples were treated with oxidization or reduction. The photo_damage resistance ability of the crystals was measured by the facula distortion method under the wavelength of 488.0 nm. The results show that the photo_damage resistance ability of Mg∶In∶LiNbO_3 crystals is two orders of magnitude greater than that of LiNbO_3. The mechanism of the enhancement of the photo_damage resistance ability for Mg∶In∶LiNbO_3 is investigated by Li vacancy model for the first time. The optical waveguide substrates of these crystals were prepared by the benzoic acid proton exchange method. The photo_damage thresholds of the y_cut waveguide substrates at the wavelength of 632.8 nm were measured by the m_line method, and the results show that the ability of photo_damage resistance ability of Mg∶In∶LiNbO_3 waveguide substrates increases two orders of magnitude in comparison with that of pure LiNbO_3.

关 键 词：Mg:In:LiNb03晶体 波导基片 光损伤性能 研究 掺杂铝酸锂晶体 引上法晶体生长 

分 类 号：O734[理学—晶体学]