体特性高压硅整流元件设计制造的关键技术  

Key Technique for Designing and Fabricating the High-voltage Power Silicon Diode with Bulk Characteristic

作　　者：徐传骧[1] 董小兵[1] 张少云[1] 

机构地区：[1]西安交通大学,西安710049

出　　处：《电力电子技术》2003年第1期66-69,共4页Power Electronics

摘　　要：具有雪崩体特性击穿的高温高压大功率整流元件的设计和制造需要采用中子辐照单晶 ,并结合不同的结片结构选择不同的基区利用系数 η。针对P+ P N N+ 型和P+ I N+ 型结构设计改进扩散方法 ,选择合适的表面造型 。The design and fabrication of high voltage power diode with avalanche breakdown bulk characteristic under high temperature needs to use NTD and combine different kinds of PN junction structures with different base utilization coefficient η. According to structures of P + P N N + and P + I N +,diffusion method should be changed and surface contour of the devices should be selected. With combined surface protection materials, high voltage power diode can achieve bulk characteristic and better breakdown voltage vs. temperature.

关 键 词：高压硅整流元件 设计 制造 雪崩体特性 电力电子器件 

分 类 号：TN35[电子电信—物理电子学] TM461[电气工程—电器]