InAlAs/InGaAs复合限制层对InAs量子点发光性质的影响  

Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs quantum dots

作　　者：张子旸[1] 金鹏[1] 曲胜春[1] 李成明[1] 孟宪权[1] 徐波 叶小玲[1] 王占国[1] 

机构地区：[1]中国科学院半导体所半导体材料科学重点实验室,北京100083

出　　处：《微纳电子技术》2003年第2期14-16,共3页Micronanoelectronic Technology

摘　　要：系统研究了InAlAs/InGaAs复合限制层对InAs量子点光学性质的影响;发现InAs量子点的基态发光峰位、半高宽以及基态与第一激发态的能级间距都强烈地依赖于InAlAs薄层的厚度和In的组分;得到了室温发光波长在1.35μm,基态与第一激发态的能级间距高达103 meV的InAs量子点的发光特性。这一结果对实现高T_0的长波长InAs量子点激光器的室温激射具有重要意义。In this work we investigate the effect of the InAlAs and InGaAs combination layer on the optical properties of self-assembled InAs/GaAs quantum dots. We find that the photolumines-cence (PL) emission energy, linewidth and the energy separation between the ground and first excited states of InAs QDs depend on the In composition and the thickness of InAlAs layer. At last, such InAs quantum dot structure demonstrates two effects; one is the PL peak redshift towards 1.35 μm at room temperature, the other is that the energy separation between the ground and first excited states can be up to 103 meV.

关 键 词：量子点 光致发光 能级间距 InAlAs/InGaAs复合限制层 

分 类 号：TN383.2[电子电信—物理电子学]