锗酸铋晶体快中子辐照损伤及其等温时效研究  

of Isothermal Annealing for BGO

作　　者：李欣年[1] 方晓明[1] 

机构地区：[1]上海大学射线应用研究所,上海201800

出　　处：《上海大学学报（自然科学版）》2003年第1期73-77,共5页Journal of Shanghai University:Natural Science Edition

摘　　要：锗酸铋(BGO)晶体作为一种优良的无机闪烁体被广泛用于高能物理和γ辐射探测技术中,这必然涉及辐照损伤的问题.该文试图对锗酸铋晶体的辐射损伤形成机理予以描述,对其进行两种不同剂量的14MeV快中子辐照和室温等温时效以及高温退火处理,将辐照前后的BGO闪烁体作为探头,测定其本底谱和137Cs的γ能谱.通过分析BGO闪烁体的峰总比、能量分辨率及道漂等变化,来揭示BGO快中子辐照损伤的形成和退火回复机制.The Bismuth Germanate crystal as a good inorganic scintillant has been widely used in high energy physics and Gamma radiation detection. This paper describes the forming mechanism of irradiation damage of BGO. 14 MeV fast neutron irradiation with two different doses and isothermal annealing in room temperature have been made on BGO crystal. The background spectra and γ spectra of 137Cs are examined respectively with probe of BGO scintillant before and after irradiation. The forming and recovery mechanism of damage induced by fast neutron irradiation for BGO has been found through the change of peaktogross ratio, energy resolution and channel drift of γ spectra.

关 键 词：BGO晶体 快中子辐照损伤 等温时效 锗酸铋晶体 退火回复机制 BGO闪烁体 能谱 

分 类 号：O774[理学—晶体学] TL812.1[核科学技术—核技术及应用]