C(膜)/Si(SiO_2)(纳米微粒)/C(膜)的XPS及Raman谱测试分析  

The XPS And Raman Analysis of Annealed C (Film)/Si (SiO_2)(Nanoparticles)/C (Film)

作　　者：邱晓燕[1] 李建[1] 

机构地区：[1]西南师范大学物理系,重庆400715

出　　处：《西南师范大学学报（自然科学版）》2003年第2期230-233,共4页Journal of Southwest China Normal University(Natural Science Edition)

摘　　要：X射线光电子能谱测试(XPS)分析C(膜)/Si(SiO2)(纳米微粒)/C(膜)样品发现:把400℃退火后的样品继续加热到650℃并退火1h后,样品中除原有的Si晶体外,生成了SiC晶体,同时还出现了SiO2晶体,这表明一部分Si与C反应生成SiC的同时,氧气的氧化作用占主导地位,把大部分Si氧化成了SiO2.对比分析在650℃和750℃退火后样品的Raman谱发现:随着加热温度的升高,SiC与Si含量增加而SiO2含量减少.这表明:在750℃时,C原子的还原作用继400℃后再次占主导地位,又把一部分SiO2还原成Si.The binding energies of C,Si,O in the sample annealed at 650 ℃ are analyzed by the means of XPS. It is found that SiC and SiO2 crystals are formed at 650 ℃. It seemed that the oxidation of oxygen occupies dominant position at 650 ℃, so most of Si are oxidized to form SiO2, and the remains of Si react with C to form SiC. Contrasting the Raman spectrum of the sample annealed at 650 ℃ with the Raman spectrum at 750 ℃, it is found that the amount of SiC and Si both increase. On the contrary, the amount of SiO2 decrease at 750 ℃. It can be concluded that the reduction of carbon atoms occupies dominant position at 750 ℃again.

关 键 词：C/S2(Si02)/C 碳膜 二氧化硅 碳纳米微粒 碳化硅 X射线光电子能谱 RAMAN谱 硅基发光材料 

分 类 号：TB34[一般工业技术—材料科学与工程] O482.31[理学—固体物理]