新型垂直腔面发射激光器的最优化设计模式  

Optimized Design Mode of a Novel Vertical-Cavity Surface-emitting Laser

作　　者：朱文军[1] 郭霞[1] 廉鹏[1] 邹德恕[1] 高国[1] 沈光地[1] 

机构地区：[1]北京工业大学光电子技术实验室,北京100022

出　　处：《量子电子学报》2003年第2期157-161,共5页Chinese Journal of Quantum Electronics

基　　金：973计划(编号:G20000688-02);国家自然科学基金(编号:60276033);北京市重点基金(编号:4021001);863计划(编号:2002AA312070);市教委基金(编号:01KJ-014)

摘　　要：本文通过提出具有优点为微分量子效率可以大于1的一种新型多有源区隧道再生应变量子阱垂直腔面发射半导体激光器(VCSELs)结构,可得到阀值电流更小、输出功率更大的器件。同时,通过对这种器件功率效率的分析,总结出针对这种新型结构的以固定工作电流及串联电阻为参数的最优化DBR反射率公式,并且就功率效率与工作电流、串联电阻及反射率的关系进行了讨论,这将对器件的合理设计以及器件制备具有实质性的指导作用。A novel multiple-active-region tunneling-regenerated strained-quantum-well vertical-cavity surface-emitting lasers (VCSELs) with a greatef-than-unity differential quantum efficiency is proposed. This novel VCSELs is expected to have an improved performance, specifically, lower threshold current and higher output power. The optimum DBR reflectivity formula in terms of wall-plug efficiency is determined for this novel VCSELs with fixed supply current and series resistance as a parameter. At the same time, we discuss the relationship among wall-plug efficiency, supply current, series resistance and DBR reflectivity, which will play an important role in the device design and device preparation.

关 键 词：多有源区 隧道再生 VCSELS 功率效率 微分量子效率 半导体激光器 

分 类 号：TN248.4[电子电信—物理电子学]