激光诱导制备纳米SiC粉体  

Synthesis of nano SiC powder by laser induced gas phase reaction

作　　者：线全刚[1] 梁勇[1] 杨柯[1] 王淑兰[1] 

机构地区：[1]中国科学院金属研究所,辽宁沈阳110016

出　　处：《沈阳工业大学学报》2003年第2期170-172,共3页Journal of Shenyang University of Technology

摘　　要：以硅烷SiH4和乙炔C2H2为反应原料,采用激光诱导化学气相沉积制各(LICVD)理想纳米SiC粉体.用化学分析、X射线衍射(XRD)、透射电子显微镜(TEM)及比表面积(BET)等分析测试手段对粉体进行了表征,结果表明粉体中SiC含量高于98%,平均粒径为20nm,晶体结构为β SiC,粉体产率大于200g/h,粉体中含氧量低于1%.In this paper,ideal nanometer SiC powder was synthesized by laser Induced Chemical Vapor Deposition (LCVD) with SiH\-4+C\-2H\-2 as starting materials.The powder produced was characterized by chemical analysis,XRD,TEM and BET techniques.The results showed that the powder of β-SiC crystallizatiod had a purity of above 98% of SiC in weight with average diameter of 20?nm and less than 1% oxygen content in weight that was mainly absorbed at the surface of the powder.

关 键 词：制备 纳米碳化硅粉体 纳米SIC粉体 激光诱导化学气相沉积 

分 类 号：TF123.31[冶金工程—粉末冶金] TB383[冶金工程—冶金物理化学]