PCS先驱体转化法制备SiC涂层的浸渍工艺  

Impregnation Process of Fabricating SiC Coating from PCS Precursor

作　　者：付志强[1] 唐春和[1] 梁彤祥[1] 

机构地区：[1]清华大学核能技术设计研究院,北京100084

出　　处：《材料工程》2003年第3期28-30,共3页Journal of Materials Engineering

摘　　要：在聚碳硅烷 (PCS)先驱体转化法制备 Si C涂层的浸渍工艺参数中 ,浸渍溶液的 PCS浓度对涂层形貌影响最大 ,而其他参数的影响很小。当 PCS的浓度不大于 30 %时均可以获得均匀、致密的 Si C涂层。随着 PCS浓度的增大 ,涂层厚度增加 ;单次浸渍可获得的 Si C涂层最大厚度为 1～ 2 μm。Among the impregnation parameters of fabricating SiC coating from polycarbosilane (PCS) precursor, including the concentration of PCS in solution, impregnation pressure, pressuring time, and evacuating time, the influence of the concentration of PCS in impregnation solution is most obviously while the influences of the other factors are negligible Uniform and dense SiC coating is fabricated when the concentration of PCS does not excess 30% The thickness of coating increases as the concentration of PCS and the maximum thickness of SiC coating obtaines through one impregnation is 1～2μm

关 键 词：SIC涂层 聚碳硅烷 浸渍 

分 类 号：TL342[核科学技术—核技术及应用] TQ163.4[化学工程—高温制品工业]