化学浸蚀温度对多孔硅粉理化性质的影响  

Effect of the Tem Perature on Properties of Porous Silicon Powder inChemical Etching Process

作　　者：黎学明[1] 潘进[2] 杜军[2] 郁卫飞[3] 聂福德[3] 

机构地区：[1]重庆大学 [2]重庆大学化学化工学院,重庆400044 [3]中国工程物理研究院化工材料研究所,绵阳621900

出　　处：《重庆大学学报（自然科学版）》2003年第3期39-41,共3页Journal of Chongqing University

基　　金：国家自然科学基金 (2 0 0 0 70 0 6);中国博士后科学基金;中国工程物理研究院化工材料所资助项目

摘　　要：多孔硅是一种由纳米硅原子簇为骨架构成的海绵状结构 ,具有比表面积高、生物相容性好等特征 ,能够应用于光电子器件、化学传感、生物医学等领域。笔者以金属硅粉作为研究对象 ,采用化学浸蚀工艺制备多孔硅粉 ,利用比表面积测定仪、扫描电子显微镜、扫描隧道显微镜等研究了不同浸蚀温度制备的多孔硅粉比表面积、孔径分布、表面形貌及微结构的变化。结果表明 :化学浸蚀方法能够在金属硅粉表面形成含较多纳米尺寸孔洞的多孔硅粉 ;随着化学浸蚀温度升高 。As a novel functional material, porous silicon constituted by a nano crystalline skeleton (quantum sponge)immersed in networks of pore, has a very large internal surface area and good biocompatibility. Because porous silicon can be easily synthesized directly by electrochemical anodization or chemical etching methods, it seems ideal for Si based opto electronic devices, biolical and chemical sensors, new material support, biocompatible materials and in vivo electronics etc.The porous silicon powder is formed by chemical etching process, and the effect of temperature on the properties of porous silicon powder is also studied. By BET, SEM and STM, the properties of the porous silicon powder such as specific surface area, structure, morphology, poresize distribution are measured. The experimental results show that there are a lot of pores with diameters in the range of 1～100 nm in porous silicon powder, and the specific surface area increase obviously with higher chemical etching temperature.

关 键 词：化学浸蚀 多孔硅 纳米结构材料 

分 类 号：O649.4[理学—物理化学] TQ560.1[理学—化学]