AlN基板材料研究进展  

The Advance of Study on Aluminum Nitride Packaging Materials

作　　者：孟献丰[1] 朱宏[1] 

机构地区：[1]南京工业大学材料学院,江苏南京210009

出　　处：《陶瓷研究与职业教育》2003年第1期41-45,共5页Ceramic Research and Vocational Education

摘　　要：氮化铝 (AlN)以其优异的高热导率、低介电常数、与Si相匹配的热膨胀系数及其它优良的物理化学性能受到了国内外学术界和生产厂家的广泛关注 ,被誉为新一代高密度封装的理想基板材料。详细综述了AlN基板在导热机理、基片制备、金属化和烧结工艺方面的研究进展 ,展望了AlN基板的发展趋势和前景。The excellent thermal conduction, coupled with other characteristics such as low dielectric constant and the coefficient of thermal expansion matched with silicon, makes AlN draw more and more attention of abroad and domestic academic circles and producer, being considered as ideal packaging materials. This paper described in detail new progress of AlN in thermal conduction mechanism, processing of AlN package, metallization and sintering, prospected the development trend of AlN.

关 键 词：AlN基板材料 研究进展 氮化铝 高热导率 低介电常数 导热机理 新型电子陶瓷 

分 类 号：TQ174.758[化学工程—陶瓷工业]