稀土配合物Eu(asprin)_3phen发光特性的研究  

The Emission of Rare Earth Complex Eu(asprin)_3phen

作　　者：沈鸿[1] 徐征[1] 陶栋梁[2] 杨军[2] 陈晓红[1] 章婷[1] 徐怡庄[2] 吴谨光[2] 

机构地区：[1]北方交通大学光电子技术研究所信息存储,显示与材料开放实验室,北京100044 [2]北京大学稀土材料化学及应用国家重点实验室,北京100871

出　　处：《光谱学与光谱分析》2003年第2期226-228,共3页Spectroscopy and Spectral Analysis

摘　　要：将稀土配合物Eu(asprin)_3phen掺杂到导电聚合物PVK中,制成结构分别为ITO/PVK:RE配合物/LiF/AI(1),ITO/PVK:RE配合物/PBD/LiF/AI(2)的电致发光(EL)器件。发现二者的电致发光谱存在着较大的差别:在器件(1)中,来自Eu^(3+)的位于594nm(~5D_0→~7F_1)和614nm(~5D_0→~7F_2)处的发光强度大致相当,而在器件(2)中,EL主要来自Eu^(3+)位于614nm的发光,594nm处的发光很弱,与薄膜状态下的光致发光谱(PL)一致。并针对此现象进行了初步讨论。Two kinds of electroluminescent devices were fabricated by doping the rare earth complex Eu (asprin)(3) phen into polymer PVK: (1) ITO/PVK:RE/LiF/Al; (2) ITO/PVK: RE/PBD/LiF/Al. A great difference in the EL spectrum was found between the two kinds of devices. In device (2) the intensity of 594 nm was rather weak compared with that of 614 nm. The spectrum was consistent with the photoluminescence (PL) spectrum under the state of thin film. But in device (1), the peak emission of 594 nm was comparable to that of 614 nm. Preliminary discuss on this phenomenon was made; in device (1), the recombination region was close to the metal cathode, effect of metal cathode on the electroluminescence of the rare earth complex caused the changes of the EL emission which was quite different from the TL emission. The phenomenon was not observed in device (2) whose recombination region was far from the cathode because an electron-transport layer was inserted.

关 键 词：稀土配合物 Eu〔asprin)3phen 发光特性 铕 电致发光 

分 类 号：O614.338[理学—无机化学] O482.31[理学—化学]