掺B过渡金属Cu、Ni的溅射研究  

Effect of dopant boron on sputtering yields of nickel and copper

作　　者：章骥平[1] 王震遐[1] 陶振兰[1] 潘冀生[1] 王承宝 林祯昌 

机构地区：[1]中国科学院上海原子核研究所,上海201800 [2]上海合金厂,上海201800

出　　处：《核技术》1992年第12期717-720,共4页Nuclear Techniques

基　　金：国家自然科学基金

摘　　要：通过对Cu、Ni两种过渡金属掺入少量B(1wt％)后溅射产额减少程度的比较,从电子结构上分析了杂质B的作用。比较Painter等对Ni掺B后结合能变化的计算,定性而言,实验结果与其相符;定量上,实验数据显得大一点。这可能与溅射过程中晶界的韧化作用等因素有关。The effect of dopant boron in nickel and copper bulk on sputtering yields has been investigated by the Rutherford backscattering spectroscopy. It is shown that the extent of decrease in sputtering yield of Ni from Ni - B alloy with respect of the electronic structure has been discussed. This experimental result qualitatively conforms to Painter's computation, and the quantitative difference may be attributed to the effect of grain boundaries and the surface topography formed during ion -bombardment.

关 键 词：溅射 掺杂 结合能 过渡元素 硼 

分 类 号：TG17[金属学及工艺—金属表面处理]