光敏器件的γ辐照损伤  

irradiation damage of photo-devices

作　　者：李世清[1] 张能立[1] 

机构地区：[1]武汉大学,武汉430072

出　　处：《核技术》1992年第12期728-730,共3页Nuclear Techniques

摘　　要：研究了光敏二极管和三极管经反应堆γ辐照后(辐照剂量为10~4、10~5 和10~6Gy(Si))引起的损伤。结果表明,γ辐照使光敏器件的光电流 I_p、电流放大倍数β和光电响应时间t减小,暗电流I_d增加,结电容C基本不变。被辐照器件放置180d 后,又经180℃温度退火72h,所测光电参数并未得到复原。这说明γ辐照除造成瞬时损伤外,还会引起部分永久性损伤。7 irradiation damage of photo -diodes and photo - transistors has been studied. The irradiation doses were 104, 105 and 106Gy(Si), respectively. The experimental results showed that the light current Ip, current amplification factor β and response time to photo -devices were all decreased while dark current Id increased and junction capacitance C unchanged basically. After 72 h of annealing at 180 ℃ ,the electro - parameters of the photo -devices stored for 180 days were not well restored, which indicated that 7 irradiation would induce not only instant but also partially permanent damage.

关 键 词：光敏器件 放射损伤 Γ辐射 

分 类 号：TN36[电子电信—物理电子学]