导电聚噻吩薄膜材料的断裂机理分析  

AN ANALYSIS OF FRACTURE MECHANISM FOR CONDUCTING POLYTHIOPHENE THIN FILMS

作　　者：王习术[1] 邓燕红[1] 

机构地区：[1]清华大学工程力学系,北京100084

出　　处：《工程力学》2003年第2期107-110,共4页Engineering Mechanics

基　　金：清华大学校基金项目(JC2000057);同济大学固体力学重点实验室高级访问学者基金资助

摘　　要：对用电化学方法制备的导电聚噻吩薄膜材料进行了拉伸破坏实验,并用电子散斑干涉法测量了力与变形关系同时用扫描电镜对材料的断口进行了断裂机理分析。研究结果表明:不同厚度的导电聚噻吩薄膜材料对其强度有较大的影响。引起薄膜材料力学特性变化的主要原因是其微结构生成机理不同,在较厚的薄膜自由表面上聚积有比较多的颗粒或大分子团结构,在干燥成型中形成一些微裂纹,这些微缺陷的存在严重影响了薄膜材料的承载能力,导致薄膜强度随厚度增加而降低。The strength and fracture mechanism analysis of conducting polythiophene thin film is carried out by means of electronic speckle pattern interferometry (ESPI) and SEM observation. The film was synthesised by a typical electrochemical method. Experimental results show that the effect of thickness on the fracture mechanism of conducting polythiophene thin films is significant and the initial microstructure of the thin film plays an important role. In particular, there are many defects on the free surface when the thickness is greater than 10~15mm. The defects mainly consist of bigger molecular granules, a porous microstructure and microcracks caused by released residual stress. The effects of the thin film thickness on fracture model, microcracks caused by residual stress. are discussed based on many SEM profiles. It is shown that the initial microstructures of the thin film under the electrochemical synthesis condition can affect the mechanical properties of the polythiophene thin film.

关 键 词：导电聚噻吩 薄膜 断裂机理 SEM 

分 类 号：O631[理学—高分子化学] O632[理学—化学]