掺杂Fe^(3+)对钛酸锶氧敏薄膜电阻的影响  

The effects of Fe^(3+)doping on resistance of SrTiO_3 films as oxygen sensors

作　　者：杨莉[1] 郭森 

机构地区：[1]山东建筑工程学院科研处,山东济南250014 [2]山东省监狱政治处,山东济南250100

出　　处：《山东建筑工程学院学报》2003年第1期78-81,共4页Journal of Shandong Institute of Architecture and Engineering

摘　　要：利用溶胶—凝胶的方法制备钛酸锶氧敏薄膜 ,掺杂不同含量的铁离子 ,测试在不同氧分压、温度下薄膜的电阻。所得到的结果和镁离子的掺杂一样 ,可以改善阻温特性 ,降低薄膜电阻。铁离子的摩尔分数在 2 0 %～ 2 5 %之间时 ,薄膜电阻在一定的温度区间内降低 ,表现出较好的氧敏特性 ,在该区间内阻温特性很好 。The SrTiO 3 film as oxygen sensors were prepared by sol gel process.The Fe 3+ doped in SrTiO 3 films in molar content were taken as 10%,15%,20%,25% and 30%,respectively.All samples were measured under the temperature of 600～900℃, and the O 2 pressures were less than 2.5×10 4 Pa.The results show that the film exhibit P type semiconductivity. It was found that when the Fe 3+ was 20% to 25% in molar content, the resistance of SrTiO 3 decreased indenpendent on the temperature change in the range of 600～900℃, exhibiting oxygen sensitive properties. The results can be explained according to the defect chemistry equations.

关 键 词：钛酸锶薄膜 铁掺杂 氧敏材料 电阻 

分 类 号：TB383[一般工业技术—材料科学与工程]