布里奇曼法生长的Hg_(1-x)Cd_xTe晶体的性能  

Characteristics of Hg_(1-x)Cd_xTe Crystal Grown by Bridgman Technique

作　　者：肖绍泽[1] 任万兴[1] 颜瑞菊 刘朝旺[1] 

机构地区：[1]昆明物理研究所,昆明650223

出　　处：《红外技术》1992年第6期1-5,共5页Infrared Technology

摘　　要：本文简要地介绍了布里奇曼法生长的Hg_(1-x)Cd_xTe晶体的组分分布、电学性质、微观结构和红外透射比曲线。这些晶体具有较好的横向组分均匀性、较低的载流子浓度和较长的少数载流子寿命。本文还报道了用此晶体制作的光电导器件的性能。Composition profile, electrical properties, microstructure and optical transmission properties of Bridgman-grown Hg_(1-x)Cd_xTe crystals are presented. The results showed that the crystals possess good radial composition uniformity, low carrier concentration and high minority lifetime. The performance of photoconductive detectors made from these crystals are described.

关 键 词：碲镉汞 晶体生长 组分分布 寿命 

分 类 号：O78[理学—晶体学]