硫增感AgBr I T颗粒乳剂光电子行为研究  

PHOTOELECTRON ACTION IN THE SULFUR-SENSITIZED T-GRAINS AgBr I EMULSION

作　　者：杨少鹏[1] 董国义[1] 陆晓东[1] 李晓苇[1] 傅广生[1] 

机构地区：[1]河北大学物理科学与技术学院,保定071002

出　　处：《感光科学与光化学》2003年第3期176-183,共8页Photographic Science and Photochemistry

基　　金：国家自然科学基金资助项目(10274017);教育部重点科研项目(01011)

摘　　要：本文利用微波吸收相敏检测技术,同时获得了硫增感AgBrIT颗粒乳剂,在不同增感条件下自由光电子和浅俘获光电子的时间衰减曲线,分析了不同的硫增感产物的陷阱效应.结果表明:开始时,增感产物起电子陷阱作用,至45min时,浅电子陷阱作用最佳.如增感时间进一步增加,硫增感产物将变为深电子陷阱.本文还讨论了浅电子陷阱中浅俘获光电子衰减时间与阱深的依存关系.The decay characteristics of photoelectrons and shallowtrapped electrons have been obtained in the sulfursensitized AgBr I Tgrains emulsion by microwave absorption and dielectric spectrum measure technique.The different results of different sensitizingtime samples related to the effects of electron traps have been analyzed.It could be concluded that the sulfursensitized centers will act as shallow electron traps at the time of 45 minutes,and act as deep electron traps with the continuous increase of sensitizing time.In addition,the relationships between the depths of different shallow traps and the decay times of shallowelectrons have been also discussed.

关 键 词：微波吸收相敏技术 硫增感 电子陷阱 光电子 

分 类 号：TQ571[化学工程—精细化工]