SiC(N)/LAS吸波材料吸波性能研究  

Microwave Absorbing Material SiC(N)/LAS

作　　者：罗发[1] 周万城[1] 焦桓[1] 赵东林[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,西安710072

出　　处：《无机材料学报》2003年第3期580-584,共5页Journal of Inorganic Materials

基　　金：航空基金(99G53082);博士点基金(19990699)

摘　　要：研究了由SiC(N)纳米吸收剂制备的SiC(N)/LAS吸波材料的介电性能,对影响介电性能的吸收剂的含量、吸波材料烧结温度和碳界面层等因素进行了较为全面的研究。结果表明,在1080℃以下烧结温度对陶瓷致密度的影响较大而对陶瓷介电常数的影响较小;在1080℃以上烧结温度对烧结致密度的影响较小,对陶瓷介电常数的影响较大,吸波材料介电常数的实测值与计算值之间存在很大的差异,这种差异是吸波材料制备过程中纳米级的SiC(N)促进了碳界面层形成,导致了在较高温度烧结时吸波材料介电常数对温度的敏感性,使吸波材料介电常数的实测值与计算值之间出现了很大的差异,形成的碳界面层复介电常数的虚部较高,使吸波材料对电磁波的损耗进一步升高,从而使吸波材料的吸波性能得到增强。Radar wave-absorbing material (RAM) SiC(N)/LAS was prepared from nano SiC(N) absorber and LAS glass powder. The effect of nano SiC(N) absorber contents, hot-pressing temperatures, and the carbon-rich layer at the absorber/matrix interface on microwave permittivity and microwave absorbing ability of the RAM were studied. The results show that increasing the hot-pressing temperature over 1080degreesC remarkably increases the RAM's permittivity while the densities of the RAM keep nearly the same. A great difference between the measured and expected permittivity exists. The discrepancy of permittivity is related to the carbon-rich layer at the absorber/matrix interface that has a high permittivity. The activity and high specific surface of the nanometer SiC(N) facilitate the interface formation and intensify the RAM s wave absorbing ability.

关 键 词：纳米SiC(N) LAS玻璃陶瓷 介电常数 界面层 吸波材料 

分 类 号：TQ129[化学工程—无机化工]