氢等离子体处理——一种有效提高碳纳米管场发射性能的方法  

Hydrogen Plasma Process: An Effective Method to Modify Field Emission Performance of Carbon Nanotubes

作　　者：张继华[1] 冯涛[1] 于伟东[1] 王曦[1] 柳湘怀[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所粒子束重点实验室,上海市长宁路865号200050

出　　处：《光散射学报》2003年第1期6-9,共4页The Journal of Light Scattering

基　　金：国家 97 3计划资助项目 (G2 0 0 0 0 6 72 0 7 2 )

摘　　要：研究了经氢等离子体处理后多壁碳纳米管的场发射性能。测量了处理前后样品的电流电压特性和表面形貌。结果表明经氢等离子体处理后,发射性能明显改善,发射点密度由未经处理的104/cm2提高到106/cm2。发现了一种新的碳纳米管结构,称之为多结的碳纳米管,并讨论了样品发射性能提高的可能机理。这种处理提供了一种有效提高发射点密度和基于碳纳米管的平板显示器性能的方法,非常适用于低成本大面积场发射阴极的制作。Electronic field emission from hydrogen plasma processed (HPP) multiwall carbon nanotubes (MWNT) films have been investigated. IV characteristics as well as surface morphology before and after the HPP were measured. Results showed after the HPP, emission sites densities increased dramaticallyfrom 103 cm-2 to 106 cm-2. A novel configuration of carbon nanotubes named Nodular carbon nanotubes was obtained. The probably mechanism correspond to the emission properties improvement was also discussed. This approach presents an effective method to increase emission sites density and improve performance of displays based carbon nanotubes. It is very suitable for large area and low cost manufacture of field emission cathodes.

关 键 词：碳纳米管 场发射性能 氢等离子体处理 电流电压特性 表面形貌 场发射阴极 

分 类 号：TB383[一般工业技术—材料科学与工程] O462.4[理学—电子物理学]