畸变对hopping电导的影响:Thue-Morse纳米结构模型  

Effect of distortion on hopping conductivity: Thue-Morse nanostructured model

作　　者：缪智武[1] 丁建文[1] 颜晓红[1] 唐娜斯[1] 

机构地区：[1]湘潭大学物理系

出　　处：《物理学报》2003年第5期1213-1217,共5页Acta Physica Sinica

基　　金：国家 973计划项目 (批准号 :1999 0 645 45 0 0 );湖南省中青年科技基金 (批准号 :0 0JZY2 138);湖南省教育厅基金 (批准号 :0 0C0 72 )资助的课题~~

摘　　要：发展实空间重正化群方法 ,研究了一维非周期Thue Morse纳米结构链的hopping电导率 .计算表明Thue Morse纳米结构体系的晶粒种类、晶粒尺寸对hopping电导有显著的调制作用 ,界面结构和晶格畸变对hopping电导也有不同程度的影响 .从无序度对hopping电导的影响来看 ,ThueA real-space renormalization-group approach is developed to calculate hopping conductivity of Thue-Morse( T-M) nanostructured chain. It is found that the kinds and the sizes, as well as the interface structures and lattice distortion of nano-grains have a notable effect on the hopping conductivity of nanostructured systems. From the effect of the degree of random on hopping conductivity, T-M chain is a system between Fibonacci and periodic sequence.

关 键 词：晶格畸变 hopping电导 Thue-Morse纳米结构模型 实空间重正化群方法 晶粒种类 晶粒尺寸 界面结构 一维非周期Thue-Morse纳米结构链 

分 类 号：O753[理学—晶体学]