a-Si/poly-Si叠层太阳电池稳定性的数值模拟分析  

THE NUMERICAL ANALYSIS OF STABILITY IN a-Si/poly-Si TANDEM SOLAR CELLS

作　　者：林鸿生[1] 段开敏[1] 

机构地区：[1]中国科学技术大学物理系,合肥230026

出　　处：《太阳能学报》2003年第2期245-248,共4页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金资助项目 ( 5 9872 0 3 7)

摘　　要：通过应用Scharfetter Gummel解法数值求解Poisson方程 ,对热平衡态a Si/ poli Si叠层太阳电池的光稳定性进行计算机数值模拟 ,详细分析光照射前后a Si/ poli Si叠层太阳电池中电场强度分布 ,指出在光照射下 ,光生空穴俘获造成的a Si:H中正空间电荷密度增加改变了电池内部的电场分布 ,普遍抬高a Si:H薄膜中的电场强度 ,没有给a Si/ poli Si叠层结构中的a Si:H薄膜带来准中性区 (低场“死层”) ,不会发生a Si/poli Si叠层太阳电池的光诱导性能衰退 ,因而a Si/ poli Si叠层结构太阳电池具有较高的稳定性。A computer simulation model of the stability of a Si/poli Si tandem solar cells at thermodynamic equilibrium using a Scharfetter Gummel solution of Poisson's equation has been developed. The distributions of electric field in a Si/poli Si tandem solar cells were analyzed in detail,before and after prolonged light soaking,respectively. The results indicate that the increase of positive space charge density changes the electric field distribution and raises the electric intensity throughout the a Si∶H film due to photo generated hole trapping.Under illumination,the space charge effects can't cause a quasi neutral region (low field 'dead layer') in a Si∶H film of Si/poli Si tandem structures,not resulting in the light induced degradation in a Si/poli Si tandem solar cells.The a Si/poli Si tandem structure possesses high stability.

关 键 词：a-Si:H光诱导性能衰退 a-Si:H隙态密度分布 Newton-Raphson解法 

分 类 号：TM914.42[电气工程—电力电子与电力传动]