有机衬底SnO_2掺Sb透明导电膜的制备  

PREPARATION OF CONDUCTING TRANSPARENT SnO_2:Sb FILMS DEPOSITED ON FLEXIBLE SUBSTRATES

作　　者：杨田林[1] 韩圣浩[2] 高绪团[1] 杨光德[1] 

机构地区：[1]山东理工大学物理系,淄博255091 [2]山东大学物理与微电子学院,济南250100

出　　处：《太阳能学报》2003年第2期273-277,共5页Acta Energiae Solaris Sinica

基　　金：国家自然基金项目 ( 60 1760 2 1)

摘　　要：采用射频磁控溅射法在有机的柔性衬底上制备出了SnO2 :Sb透明导电膜 ,讨论了薄膜的结构和光电性质对制备条件的依赖关系。制备的样品为多晶薄膜 ,并且保持了二氧化锡的金红石结构。对衬底适当的加热 ,当衬底温度为2 0 0℃时 ,在PI(Polyisocyanate聚酰亚胺 )胶片上制备出了性能良好的薄膜 ,薄膜相应的自由载流子霍耳迁移率有最大值为 13cm2 /VS ,载流子浓度为 15 .5× 10 19cm-3 ,薄膜的电阻率有最小值 3.7× 10 -3 Ω·cm。在可见光范围内 ,样品的相对透过率为 85Transparent conducting SnO 2∶Sb films were deposited on organic substrates by r.f.magnetron sputtering.Structural and photoelectric properties of the films dependence of preparation condition were discussed.Polycrystalline films still retained the rutile structure. Transparent conducting SnO 2∶Sb films with good properties were deposited on PI substrate when substrates were heated properly. Film Hall mobility of 13cm 2/VS,Carrier concentration of 15.5×10 19 cm -3 and resistivity of 3.7×10 -3 Ω·cm at substrates temperature of 200 ℃. The average transmittance reaches 85% in visible region.

关 键 词：柔性衬底 SnO2:Sb透明导电膜 射频磁控溅射 

分 类 号：TM615[电气工程—电力系统及自动化]