含C、Ge的Fe-Si-Mn基热电材料的电学性能  

Transport properties of Fe-Si-Mn based thermoelectric alloys doped with carbon, germanium

作　　者：李伟文[1] 赵新兵[1] 邬震泰[1] 曹高劭[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江杭州310027

出　　处：《功能材料》2003年第3期306-307,310,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(59971044)

摘　　要：　对掺C和Ge的Fe Si Mn基热电材料的电学性能研究表明,相对于未掺的Fe Si Mn基热电材料,掺C样品的电阻率降低,但热电动势率增加。掺Ge样品的电阻率有所升高,但热电动势率增加更快,因此掺C、Ge样品有较高的功率因子,比未掺样品提高近1倍。The transport properties of FeSiMn based thermoelectric materials doped with C, Ge were studied. It was showed that FeSiMnC alloys have lower electrical resistivities and higher Seebeck coefficients than FeSiMn alloy and as a result have larger power factors. It was observed that doping germanium in FeSi2 based alloys also have high power factors.

关 键 词：半导体热电材料 电学性能 掺杂 Fe-Si-Mn 电阻率 热电动势率 

分 类 号：TN37[电子电信—物理电子学]