铈离子注入Zr-4合金的高温氧化行为  

Oxidation behavior of Ce ions-implanted Zr-4 alloy at high temperature

作　　者：陈小文[1] 白新德[1] 余任泓[1] 陈宝山[2] 

机构地区：[1]清华大学材料科学与工程系,北京100084 [2]建中化工总公司,宜宾644000

出　　处：《核技术》2003年第6期463-466,共4页Nuclear Techniques

基　　金：材料先进制备形成与加工的科学基础(G2000067207); 973课题;清华大学985课题;清华大学开放实验室;国家自然科学基金项目 (G2000067207-1)资助

摘　　要：为了研究铈离子注入对Zr-4合金氧化性能的影响,对Zr-4合金表面注入了不同剂量的铈离子, 并在500C条件下进行了空气氧化实验。氧化曲线表明,铈离子注入能明显改善Zr-4合金的氧化性能,且注量越高,氧化性能改善的程度也越大。运用俄歇电子谱(AES)、X光电子谱(XPS)和小角掠射X光衍射技术(GAXRD)等测试方法分别分析了注入样品表层元素的深度分布、氧化膜成分及相结构,同时探讨了铈离子注入改善Zr-4合金氧化性能的机制。In order to investigate the oxidation behavior of Zr-4 induced by Ce ion implantation at different fluences, mass gain curves of the different specimens including as-received Zr-4 and Ce ions-implanted Zr-4 were measured after oxidation in air at 500℃. It was obviously found that a significant improvement was achieved in the oxidation behavior of Ce ions-implanted Zr-4. The depth profile of the element composition was obtained by AES, and the va-lence of the oxides in the scale was analyzed by XPS. The phase transformation in the oxide films was examined by GAXRD showing that the addition of Ce had transformed the phase from monoclinic ZrO2 to hexagonal ZrO2. Finally, mechanism of the improvement of the oxidation behavior was discussed.

关 键 词：ZR-4合金 氧化 铈离子注入 相转变 

分 类 号：TL341[核科学技术—核技术及应用]