介质层对真空微电子三极管特性的影响研究  

Studies on the Influence of the Dielectric Layer on the Characterization of Vacuum Microelectronic Triode

作　　者：薛晋惠[1] 曾葆青[2] 

机构地区：[1]川北医学院物理教研室,四川南充637007 [2]电子科技大学物理电子学院,四川成都610054

出　　处：《四川师范学院学报（自然科学版）》2003年第2期196-199,共4页Journal of Sichuan Teachers College(Natural Science)

摘　　要：用粒子模拟程序MAGIC模拟了真空微电子三极管的电子学特性,其发射电流由Folwer Nordheim公式得出.研究了栅极与阴极间介质层对电子发射特性的影响,发现介质层的位置对发射特性有较大的影响.对一个典型结构真空微电子三极管的模拟结果表明,当介质孔半径从0.4μm增加到2.0μm时,发射电流将从0.198μA减小到0.115μA,前人的研究工作中常常忽略了介质层对电子发射特性的影响.同时还得到了电流 电压特性和电子轨迹图等模拟结果.Using the Particleincell (PIC) code-MAGIC, the performance of a vacuum microelectronic triode has been simulated. Electrons emission is calculated from the FowlerNordheim equation. The dependence of emitted current and field enhancement upon the location of dielectric is given, which shows that the emission would be decreased from 0198μA to 0115 μA, while the radius of dielectric hole increases from 0.4 μm to 2.0 μm for a typical structure.Nevertheless,the influence of dielectric layer on the electronic emittel property had been ignored before. The electron trajectory and the emitted currentgate voltage are shown too.

关 键 词：真空微电子三极管 介质层 电子学特性 粒子模拟程序 发射电流 发射特性 

分 类 号：TN112[电子电信—物理电子学]