Sol-Gel法制备ZnO∶Al透明导电薄膜  

Aluminum-doped ZnO Transparent Conducting Thin Films by the Sol-Gel Method

作　　者：吕敏峰[1] 崔作林[1] 张志焜[1] 

机构地区：[1]青岛化工学院纳米材料研究所,山东青岛266042

出　　处：《材料科学与工程学报》2003年第2期224-227,共4页Journal of Materials Science and Engineering

摘　　要：采用Sol Gel工艺在普通载玻片上制备出C轴择优取向性、高可见光透过率以及高电导率的Al3+离子掺杂的ZnO透明导电薄膜。利用SEM、XRD等分析手段对薄膜进行了表征。研究结果表明 :所制备的薄膜为纤锌矿型结构 ,表面平整、致密。通过标准四探针法及UVS透射光谱详细研究了Al3+ 离子掺杂的ZnO薄膜的电学与光学性能。实验发现 ,当Al3+ 离子掺杂浓度为 0 8%时 ,前处理温度为 40 0℃ ,退火温度为 5 5 0℃ ,真空退火温度为 5 5 0℃时 ,薄膜具有较好的导电性 ,电阻率为 3 0 3× 10 - 3Ω·cm ,其在可见光区的透过率超过 80 %。The Al 3+-doped ZnO transparent-conducting films were prepared on glass subtrates(microscope sildes) by Sol-Gel method from Zn(OCA) 2·H 2O-2methoxyethanol solutions containing monoethanolamine. The films have potential value with strongly preferred orientation of C-axis perpendicular to the substrate surface, high visible transmittance from 400-800nm and high conductivity. Thin films were characterized using scanning electron microscopy, X-ray diffraction. The results proved that the films were homogenous, dense with the crystalline phase of hexagonal wurtzite. By the measurements of standard Four-Probe method and UV-Vis transmittance spectroscopy, the electrical and optical properties of Al 3+-doped ZnO thin films were investigated. The experiental data show that the favourable electrical conducting thin films have been achieved with resistivity of 3.03×10 -3Ω·cm and the transmittance of >80% in 400-800nm visible region derived by Al/Zn ratios of 0.8%; re-heat treatment at 400℃ for 10min; annealing at 550℃ for 1h and annealing in vacuum at 550℃ for 1h.

关 键 词：SOL-GEL法 制备 透明导电薄膜 氧化锌 溶胶-凝胶法 铝离子掺杂 性能 

分 类 号：TN304.21[电子电信—物理电子学] TN304.055