Si_3N_4/SiO_2复合栅介质电离辐照的电子能谱分析  

Analysis of X-ray photoelectron spectroscopy on Si_3N_4/SiO_2double-gate medium under irradiation

作　　者：范隆[1] 郝跃[1] 严荣良[2] 陆妩[2] 

机构地区：[1]西安电子科技大学微电子所,陕西西安710071 [2]中国科学院新疆物理研究所,新疆乌鲁木齐830011

出　　处：《西安电子科技大学学报》2003年第3期302-305,共4页Journal of Xidian University

基　　金：国家部委预研基金资助项目(98J11 2 12 ZK0801)

摘　　要：采用氩离子刻蚀X光激发电子能谱分析方法对Si3N4/SiO2/Si复合栅介质系统进行电离辐照剖析.实验结果表明存在一个由Si3N4和SiO2构成的界面区及由SiO2和Si构成的界面区,电离辐照能将SiO2/Si界面区中心向Si3N4/SiO2界面方向推移,同时SiO2/Si界面区亦被电离辐照展宽;电离辐照相当程度地减少位于SiO2/Si界面至Si衬底之间Si过渡态的浓度.在同样偏置电场中辐照,随着辐照剂量的增加SiO2/Si界面区中Si过渡态键的断开量也增加,同时辐照中所施偏置电场对SiO2/Si界面区Si过渡态键断开有显著作用.并对实验现象进行了机制分析.A depth profile analysis of the irradiation effect of Si3N4/SiO2 double-gate medium under 60Co-γ ray irradiation was carried out by using the X-ray photoemission spectroscopy (XPS) method, with Ar+ ion etching. The experimental results show that there is distinct interface region between Si3N4 and SiO2 as well as between SiO2 and Si, respectively, and after irradiation, a shift of the center of Si02/Si interface region to Si3N4/SiO2 interface occurs. In addition, the SiO2/Si interface region is broadened. A great decrease in concentration of Si middle state located in a region from SiO2/Si interface to Si substrate is induced by irradiation. With the same bias, the amount of break-bond of Si middle stales located in Si02/Si interface region increases with increasing radiation doses. It is found that the bias on the sample radiated plays an obvious role in breaking the bonds of Si middle states. Finally a discussion on experimental results is presented.

关 键 词：Si3N4/SiO2复合栅介质 电离辐照 X光激发电子能谱 氢离子刻蚀 Si过渡态 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN406