Co/a-GeSi/Ti/Si多层薄膜固相反应外延生长CoSi_2薄膜  

Epitaxial Growth of CoSi_2 on Si(100) Substrate by Co/GeSi/Ti/Si Multilayer Solid Phase Reaction

作　　者：徐蓓蕾[1] 屈新萍[1] 韩永召[1] 茹国平[1] 李炳宗[1] W.Y.Cheung S.P.Wong Paul K.Chu 

机构地区：[1]复旦大学微电子学系,ASIC及系统国家重点实验室,上海200433 [2]香港中文大学电子工程系 [3]香港城市大学物理和材料科学系

出　　处：《固体电子学研究与进展》2003年第2期149-154,共6页Research & Progress of SSE

基　　金：上海市教委资助;上海教育发展基金会曙光计划资助;中国教育部博士点基金资助 ;国家自然科学基金 ( NSFC-60 10 60 0 2;NSFC-60 2 0 60 0 2 )资助

摘　　要：研究了在 Co/Ti/Si结构中加入非晶 Ge Si层对 Co Si2 /Si异质固相外延的影响 ,用离子束溅射方法在Si衬底上制备 Co/Ge Si/Ti/Si结构多层薄膜 ,通过快速热退火使多层薄膜发生固相反应。采用四探针电阻仪、AES、XRD、RBS等方法进行测试。实验表明 ,利用 Co/Ge Si/Ti/Si固相反应形成的 Co Si2 薄膜具有良好的外延特性和电学特性 ,Ti中间层和非晶 Ge Si中间层具有促进和改善 Co Si2 外延质量 ,减少衬底耗硅量的作用。Ge原子的存在能够改善外延 Co Si2The effect of amorphous GeSi layer interposed between Co and Ti layers on Si(100) substrate on the solid phase heteroepitaxy of CoSi 2/Si structure is investigated.Co/GeSi/Ti multilayers have been sputtered on Si substrates.Epitaxial CoSi 2 film with good electric properties was formed after rapid thermal annealing.When the thickness of the interposed GeSi films changed from 0 to 10 nm,the formed CoSi 2 film always has the favorable epitaxial quality and stable low electrical resistivity.At low annealing temperature(<800 ℃),Ti will combine with Co?O or Si to form ternary compounds such as Co 2Ti 4O and Ti 2Co 3Si,which will act as diffusion barrier and promote the epitaxial growth of CoSi 2 film.The GeSi interlayer will reduce the consumption of substrate Si during CoSi 2 formation and the small amounts of Ge will improve the mismatch between epitaxial CoSi 2 and substrate Si.

关 键 词：金属硅化物 固相外延 扩散阻挡层 晶格失配 Co/Ti/Si结构 钴钛硅化合物 

分 类 号：TN304.26[电子电信—物理电子学] TN304.054