直拉重掺硼硅单晶的研究进展  

Heavily Boron Doped Czochralski Silicon

作　　者：李春龙[1] 沈益军[1] 杨德仁[1] 马向阳[1] 余学功[1] 阙端麟[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江杭州310027

出　　处：《稀有金属》2003年第3期357-360,共4页Chinese Journal of Rare Metals

摘　　要：系统介绍了直拉重掺硼 (B)硅单晶研究的最新进展。主要内容包括重掺B硅单晶的基本性质 ,利用重掺B籽晶进行无缩颈硅单晶生长技术 ,重掺B硅单晶的机械性能 ,重掺B硅单晶中的氧和氧沉淀 ,以及B的大量掺杂与大直径直拉硅单晶中空洞型 (Void)原生缺陷的控制关系。在此基础上 。The recent development in heavily B doped CZ silocon was reviewed. The dislocation free crystal growth based on heavily B doped seeds without Dash necking was introduced. The mechanical properties, the oxygen and the void defects of heavily B doped Czochralski silicon were also discussed. Furthermore, some issues to be investigated for heavily B doped silicon were proposed.

关 键 词：直拉硅 重掺硼 氧 缩颈 

分 类 号：TN304.1[电子电信—物理电子学]