非制冷型InAsSb光电探测器及其应用  

Uncooled InAsSb Photodetectors and Its Application

作　　者：仲伟君[1] 赵晓利[1] 

机构地区：[1]军械工程学院,河北石家庄050003

出　　处：《电子元器件应用》2003年第6期63-66,共4页Electronic Component & Device Applications

摘　　要：InAsSb是1种窄禁带超晶格材料,也是1种性能优良的红外探测器材料。本文根据红外引信对目标识别的要求,首先将非制冷型InAsSb探测器与其它非制冷型探测器作一比较,然后具体分析4种InAsSb材料光电二极管的结构及性能,特别是各种因素对探测器性能的影响。InAsSb is a kind of narrow-band superlattice material, and is qualified for IR detectors. Based on the requirements of IR fuze to recognize targets, this paper firstly compares the uncooled InAsSb photodetectors with other uncooled detectors. and then analyzes the structure and performance of four kinds of photodiodes made of InAsSb materials, especially the influences of various of factors on the performance.

关 键 词：铟砷锑材料 光电探测器 红外引信 目标识别 

分 类 号：TN215[电子电信—物理电子学]