准—维NbSe_3单晶的制备及其输运特性  

Growth of quasi-one-dimensional NbSe3 crystal and study of its transport properties

作　　者：王洪涛[1] 郑毅[2] 陈学枝[2] 许祝安[3] 

机构地区：[1]温州师范学院 [2]浙江大学 [3]浙江大学物理系,杭州市310027

出　　处：《材料研究学报》2003年第3期247-252,共6页Chinese Journal of Materials Research

基　　金：国家自然科学基金No.19904009;教育部回国人员科研启动基金

摘　　要：用气相输运法制备了准一维结构的NbSe_3单晶,并研究了其剩余电阻率与杂质的关系。在电子扫描电镜(SEM)下观测了NbSe_3单晶的表面形貌,未见亚微米尺寸的缺陷。NbSe_3单晶的电阻温度与温度的关系(ρ-T)曲线表明,NbSe_3样品分别在T_(ρ1)=145 K和T_(ρ2)=57 K 经历两次 Peierls相变、剩余电阻比 RRR高于 200。根据对不同样品的ρ-T曲线的研究指出,以前的文献用剩余电阻比估计杂质浓度n_i的方法是一个错误,并提出了改进措施。The growth condition of quasi-one-dimensional NbSe3crystal by vapor transport method was reported and the effect of impurities on its residual resistivity was studied. Scanning-electron microscopy (SEM) observation showed that the surface of the strip-shaped crystal is smooth and no submicron defects were observed. The temperature dependence of resistivity (ρ-T) of NbSe3 crystal showed that it experiences two Peierls transitions at Tp1=145 K and Tp2=57 K respectively, and the residual resistance ratio RRR is higher than 200. By comparing the temperature dependence of resistivity of different samples from the same batch, an error in estimating the impurity concentration by RRR in the literature was pointed out and an improved method was suggested.

关 键 词：材料科学基础学科 PEIERLS相变 NbSe3单品 剩余电阻比 电荷密度波 杂质浓度 

分 类 号：O513[理学—低温物理] O441[理学—物理]